Parallel Simulation of Electron Transport in Nanostructures
|Research Area||Materials Science|
|Principal Investigator(s)||Boris N. Chetverushkin|
The aim of the project is to continue of investigation the electron transport processes in the nanostructures for the purpose of creation of the next generation of electronic devices, using quantum effects. We intend to consider electron processes in the semiconductor nanostructures with two-dimensional electron gas and the electron auto-emission processes in silicon cathodes and carbon tubes with nano sizes. The suggested problems are of great innovative potential. Most of the program support for the project is already elaborated and adapted to high-performance computing. Use of DEISA systems can significantly put forward the numerical simulations and to increase the accuracy of computational results.